• Part: CIL187
  • Description: NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 150.48 KB
Download CIL187 Datasheet PDF
Continental Device India
CIL187
CIL187 is NPN SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
DESCRIPTION SYMBOL Collector Emitter Voltage (VBE =0) VCES Collector Emitter Voltage ( Open Base) VCEO Emitter Base Voltage ( Open Collector) VEBO Collector Current Collector Curent ( Peak Value ) Base Current Base Current (Peak Value) Total Power Dissipation @ Ta=25ºC Operating And Storage Junction Tj, Tstg Temperature Range VALUE 25 15 5 700 1 100 200 625 -55 to +150 ELECTRICAL CHARACTERISTICS ( Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICBO VCB=25V, IE = 0 VALUE TYP MAX 10 Emitter Cut off Current Base Cut on Voltage Collector Emitter Saturation Voltage DC Current Gain IEBO VBE (on) VCE(sat) VCB=25V, IE = 0 Tj= 150ºC VEB=5V, IC = 0 IC =1A, VCE =1V IC=1A,IB=100m A h FE VCE=10V,IC=5m A VCE=1V,IC=300m A VCE=1V,IC=1A 50 100 40 10 1 0.5 DYNAMIC CHARACTERISTICS Transition Frequency Collector Capacitance f T IC=10m A,...