CIL187 Datasheet PDF | Continental Device India

Continental Device India CIL187

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CIL187
Datasheet	CIL187 Download
Manufacturer	Continental Device India
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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ABSOLUTE MAXIMUM RATINGS

( Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL Collector Emitter Voltage (VBE =0) VCES Collector Emitter Voltage ( Open Base) VCEO Emitter Base Voltage ( Open Collector) VEBO Collector Current IC CollectorCurent ( Peak Value ) ICM Base Current IB Base Current (Peak Value) IBM Total Power Dissipation @ Ta=25ºC PTA Operating And Storage Junction Tj, Tstg Temperature Range VALUE 25 15 5 700 1 100 200 625 -55 to +150

ELECTRICAL CHARACTERISTICS

( Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION Collector Cut off Current ICBO VCB=25V, IE = 0 MIN VALUE TYP MAX 10 Emitter Cut off Current Base Cut on Voltage Collector Emitter Saturation Voltage DC Current Gain IEBO VBE (on) VCE(sat) VCB=25V, IE = 0 Tj= 150ºC VEB=5V, IC = 0 IC =1A, VCE =1V IC=1A,IB=100mA hFE VCE=10V,IC=5mA VCE=1V,IC=300mA VCE=1V,IC=1A 50 100 40 1 10 1 0.5 300 DYNAMIC CHARACTERISTICS Transition Frequency Collector Capacitance fT IC=10mA, VCE=2V Cc CIL187 IE=0, VCB=5V, CIL188...