CIL187
CIL187 is NPN SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
DESCRIPTION
SYMBOL
Collector Emitter Voltage (VBE =0)
VCES
Collector Emitter Voltage ( Open Base) VCEO
Emitter Base Voltage ( Open Collector) VEBO
Collector Current
Collector Curent ( Peak Value )
Base Current
Base Current (Peak Value)
Total Power Dissipation @ Ta=25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
VALUE 25 15 5 700 1 100 200 625
-55 to +150
ELECTRICAL CHARACTERISTICS ( Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
ICBO VCB=25V, IE = 0
VALUE TYP
MAX 10
Emitter Cut off Current
Base Cut on Voltage
Collector Emitter Saturation Voltage DC Current Gain
IEBO VBE (on) VCE(sat)
VCB=25V, IE = 0 Tj= 150ºC VEB=5V, IC = 0 IC =1A, VCE =1V IC=1A,IB=100m A h FE VCE=10V,IC=5m A VCE=1V,IC=300m A VCE=1V,IC=1A
50 100 40
10 1 0.5
DYNAMIC CHARACTERISTICS
Transition Frequency Collector Capacitance f T IC=10m A,...