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Continental Device India Limited
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SOT-23 Formed SMD Package
CMBT3905
SILICON EPITAXIAL TRANSISTOR
P–N–P transistor
Marking CMBT3905 = 2Y
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 60 °C D.C. current gain –IC = 10 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V
–V CBO –V CEO –V EBO –IC Ptot hFE fT
max. max. max. max. max.
40 40 5 200 250
V V V mA
mW
50 to 150 min.