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CMBT3906 - SILICON PLANAR EPITAXIAL TRANSISTORS

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Part number CMBT3906
Manufacturer CDIL
File Size 96.20 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet CMBT3906 Datasheet
Additional preview pages of the CMBT3906 datasheet.

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Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 10 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V –VCB0 –VCE0 –VEB0 –IC Ptot hFE fT max. max. max. max. max. 40 40 5 200 250 V V V mA mW 100 to 300 min.
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