Continental Device India CMBT5550
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | CMBT5550 |
|---|---|
| Datasheet | CMBT5550 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25°C Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA D.C. current gain IC = 10 mA; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current VCBO VCEO IC Ptot VCEsat hFE max. max. max. max max. 160 140 600 250 V V mA mW 0.25 V 60 to 250 VCBO VCEO VEBO IC max. max. max. max. 160 140 6 600 V V V mA Continental Device India Limited Data Sheet Page 1 of 3 CMBT5550 Total power dissipation up to Tamb = 25°C Storage temperature Junction temperature THERMAL RESISTANCE from junction to ambient Ptot Tstg Tj max 250 mW –55 to +150 ° C max. 150 ° C Rth j–a 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut–off current ICBO IE = 0; VCB = 100 V ICBO IE = 0; VC...
