CMBT5550 Datasheet | Continental Device India

.. Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany SOT-23 Formed SMD Package SILICON N- P- N HIGH- VOLTAGE TRANSISTOR N- P- N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector- base voltage (open emitter) Collector- emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25°C Collector- emitter saturation voltage IC = 50 m A; IB = 5 m A D.C. current gain IC = 10 m A; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector- base voltage (open emitter) Collector- emitter voltage (open base) Emitter- base voltage (open collector) Collector current VCBO VCEO IC Ptot VCEsat h FE max. max. max. max max. 160 140 600 250 V V m A m W 0.25 V 60 to 250 VCBO VCEO VEBO IC max. max. max. max. 160 140 6 600 V V V m A Continental Device India Limited Data Sheet Page 1 of 3 .. Total power dissipation up to Tamb = 25°C Storage temperature Junction temperature THERMAL RESISTANCE from junction to ambient Ptot Tstg Tj max 250 m W - 55 to +150 ° C max. 150 ° C Rth j- a 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut- off current ICBO IE = 0; VCB = 100 V ICBO IE = 0; VCB = 100 V; Tamb = 100 °C Emitter cut- off current IEBO IC = 0; VEB = 4.0 V Breakdown voltages V(BR)CEO IC = 1 m A; IB = 0 V(BR)CBO IC = 10 µA; IE = 0 V(BR)EBO IC = 0; IE = 10 µA Saturation voltages VCEsat IC = 10 m A; IB = 1 m A VBEsat IC = 50 m A; IB = 5 m A D.C. current gain IC = 1 m A; VCE = 5 V IC = 10 m A; VCE = 5 V IC = 50 m A; VCE = 5 V Output capacitance at f = 1 MHz IE = 0; VCB = 10 V Input capacitance at f = 1 MHz IC = 0; VEB = 10 V Transition frequency at f = 100 MHz IC = 10 m A; VCE = 10 V; Tamb = 25 °C VCEsat VBEsat h FE h FE h FE Co Ci f T max. max. max. min. min. min. max. max. max. max. min. min. max. min. max. max. min. max. 100 n A 100 m A 50 n A...