Continental Device India CMBT5088
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | CMBT5088 |
|---|---|
| Datasheet | CMBT5088 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
5088 5089 Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA D.C. current gain IC = 100 µA; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V *FR-5 Board = 1.0 × 0.75 × 0.062 in. VCB0 VCE0 IC Ptot* Tj VCEsat hFE max. max. max. max. max. max. 35 30 50 225 150 0.5 30 V 25 V mA mW °C V 400 1200 min. 300 max. 900 min. 50 fT MHz Continental Device India Limited Data Sheet Page 1 of 3 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c.) IC Ptot* Total power dissipation up to Tamb = 25 °C Storage temperature Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwis...
