CMBT5401
CMBT5401 is SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany
SOT-23 Formed SMD Package
SILICON P- N- P HIGH- VOLTAGE TRANSISTOR
P- N- P transistor
Marking CMBT5401 = 2L
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
ABSOLUTE MAXIMUM RATINGS Collector- base voltage (open emitter) Collector- emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25°C Collector- emitter saturation voltage IC = 50 m A; IB = 5 m A D.C. current gain IC = 10 m A; VCE =
- 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector- base voltage (open emitter) Collector- emitter voltage (open base) Emitter- base voltage (open collector) Collector current
- V CBO
- V CEO
- IC Ptot VCEsat h FE max. max. max. max max.
160 150 500 250
V V m A m W
0,5 V 60 to 240
- V CBO
- V CEO
- V EBO
- IC max. max. max. max.
160 150 5 500
V V V m A
Continental Device India Limited
Data Sheet
Page 1 of 3
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Total power dissipation up to Tamb = 25°C Junction temperature Storage temperature THERMAL RESISTANCE from junction to ambient
Ptot Tj Tstg max 250 m W max. 150 ° C
- 55 to +150 °...
