• Part: CMBT5401
  • Description: SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 135.76 KB
Download CMBT5401 Datasheet PDF
Continental Device India
CMBT5401
CMBT5401 is SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
.. Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany SOT-23 Formed SMD Package SILICON P- N- P HIGH- VOLTAGE TRANSISTOR P- N- P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector- base voltage (open emitter) Collector- emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25°C Collector- emitter saturation voltage IC = 50 m A; IB = 5 m A D.C. current gain IC = 10 m A; VCE = - 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector- base voltage (open emitter) Collector- emitter voltage (open base) Emitter- base voltage (open collector) Collector current - V CBO - V CEO - IC Ptot VCEsat h FE max. max. max. max max. 160 150 500 250 V V m A m W 0,5 V 60 to 240 - V CBO - V CEO - V EBO - IC max. max. max. max. 160 150 5 500 V V V m A Continental Device India Limited Data Sheet Page 1 of 3 .. Total power dissipation up to Tamb = 25°C Junction temperature Storage temperature THERMAL RESISTANCE from junction to ambient Ptot Tj Tstg max 250 m W max. 150 ° C - 55 to +150 °...