Continental Device India CP757
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | CP757 |
|---|---|
| Datasheet | CP757 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
Requiring High Breakdown Voltage and Low Saturation Voltage Complementary CN656 and CN657ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC )DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Ta=25ºC Power Dissipation at TC=25ºC Operating and Storage Junction Temperature Range Thermal Resistance Junction to Ambient Junction to Ambient Junction to Case SYMBOL VCBO VCEO VEBO *ICM IC PD **PD PD Tj, Tstg CP756 200 200 5 1.0 0.5 0.9 7.2 1.1 2.2 - 65 to +150 CP757 300 300 UNIT V V V A A W mW/ºC W W ºC Rth (j-a) 1 Rth (j-a) 2+ Rth (j-c) 138.8 113.6 56.8 ºC/W ºC/W ºC/W * Consult safe operating area graph for conditions. **Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min 10mm x 10 mm, copper 2+ Device mounted on P.C.B with copper equal to 1sq.inch. MinimumELECTRICAL CHARACTERISTICS
(Ta=25ºC unless spec...
