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PROCESS
Small Signal MOSFET Transistor
P-Channel Enhancement-Mode MOSFET Chip
CP757X
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PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 22 x 17 MILS 5.9 MILS 3.9 x 3.9 MILS 14 x 9 MILS Al-Si - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 63,570 PRINCIPAL DEVICE TYPE CMLDM5757
R0 (2-December 2010)
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PROCESS
CP757X
Typical Electrical Characteristics
R0 (2-December 2010)
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CP757X Datasheet
