CSA952 Datasheet PDF | Continental Device India

Continental Device India CSA952

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSA952
Datasheet	CSA952 Download
Manufacturer	Continental Device India
Description	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL VALUE BVCBO 30 Collector -Base Voltage BVCEO 25 Collector Emitter Voltage BVEBO 5.0 Emitter Base Voltage IC 700 Collector Current (DC) ICP** 1.0 Collector Current (Peak) Ptot 600 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range **PW=10ms, duty cycle=50%

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN ICBO VCB=30V, IE=0 Collector Cut off Current ICEO VCE=25V, IB=0 IEBO VEB=5V, IC=0 Emitter Cut off Current hFE (1) VCE=1V, IC=100mA* 90 DC Current Gain hFE (2) VCE=1V, IC=700mA* 50 VBE(on) IC=10mA, VCE=6V* 0.6 Base Emitter Voltage Collector Emitter Saturation Voltage VCE(Sat) IC=700mA, IB=70mA* VBE(Sat) IC=700mA, IB=70mA* Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=6V, IC=10mA, 50 Transition Frequency Cob VCB=6V, IE=0 Collector Output Capacitance f=1MHz hFE(1) Classification : M : 90-1...