CSB856 - PNP SILICON POWER TRANSISTOR

CDIL

General Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25 º C Operating & Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj, Tstg VALUE 50 50 4.0 3.0 25 -65 to +150 UNIT V V V A W ºC ELECTRICAL CHARACTERISTICS (

📥 Download Datasheet

CSB856 pnp silicon power transistor by CDIL - Datasheet Preview

Datasheet Details

Part number	CSB856
Manufacturer	CDIL
File Size	160.22 KB
Description	PNP SILICON POWER TRANSISTOR
Datasheet	CSB856 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CSB857	Power Transistors	RECTRON
CSB800	Technical Data of Ceramic Resonator	ETC
CSB0630	High Current Power Inductor	CODACA
CSB0640	High Current Power Inductor	CODACA
CSB0650	High Current Power Inductor	CODACA

Other Datasheets by CDIL

Part Number	Description
CSB857	(CSB857 / CSB858) PNP/NPN SILICON POWER TRANSISTOR
CSB858	(CSB857 / CSB858) PNP/NPN SILICON POWER TRANSISTOR
CSB834	PNP SILICON POWER TRANSISTOR
CSB1058	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSB507	PNP / NPN PLASTIC POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB856 TO-220 Plastic Package www.DataSheet4U.com LOW FREQUENCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25 º C Operating & Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj, Tstg VALUE 50 50 4.0 3.