• Part: CSC2001
  • Description: PNP EPITAXIAL PLANAR SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 59.48 KB
Download CSC2001 Datasheet PDF
Continental Device India
CSC2001
DESCRIPTION SYMBOL VALUE BVCBO 30 Collector -Base Voltage BVCEO 25 Collector Emitter Voltage BVEBO 5.0 Emitter Base Voltage IC 700 Collector Current (DC) ICP- - 1.0 Collector Current (Peak) Ptot 600 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range - - PW=10ms, duty cycle=50% ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN ICBO VCB=30V, IE=0 Collector Cut off Current ICEO VCE=25V, IB=0 IEBO VEB=5V, IC=0 Emitter Cut off Current h FE (1) VCE=1V, IC=100m A- 90 DC Current Gain h FE (2) VCE=1V, IC=700m A- 50 VBE(on) IC=10m A, VCE=6V- 0.6 Base Emitter Voltage Collector Emitter Saturation Voltage VCE(Sat) IC=700m A, IB=70m A- VBE(Sat) IC=700m A, IB=70m A- Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=6V, IC=10m A, 50 Transition Frequency Cob VCB=6V, IE=0 Collector Output Capacitance f=1MHz h FE(1) Classification : M : 90-180; L : 135-270; K : 200-400 Marking CSA CSA CSA 952 952 952 M...