• Part: CSC2002
  • Description: NPN SILICON PLANAR EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 145.31 KB
Download CSC2002 Datasheet PDF
Continental Device India
CSC2002
DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation Storage Temperature Junction Temperature SYMBOL VCEO VCBO VEBO IC IB PC Tstg Tj VALUE 60 60 5 300 60 600 - 55 to +150 +150 UNITS V V V m A m A m W ºC ºC ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage Transition Frequency Collector to Base Capacitance - Pulsed PW <350µ s, Duty Cycle <2% h FE (1) SYMBOL ICBO IEBO h FE (1) TEST CONDITION VCB=60V, IE = 0 VEB=5V, IC = 0 VCE=1V, IC=50m A VCE=2V, IC=300m A IC=300m A, IB=30m A IC=300m A, IB=30m A VCE=6V, IC=10m A VCE=6V, IC= -10m A, IE=0, VCB=6V, f=1MHz MAX 100 100 400 0.6 1.2 UNITS n A n A - 90 30 VCE (sat) - VBE (sat) - VBE - f T Cob V V V MHz p F 0.6 50 0.7 15 Classification M : 90 - 180, L : 135 - 270, K : 200 -...