CSC2229Y
CSC2229Y is NPN SILICON HIGH VOLTAGE TRANSISTOR manufactured by Continental Device India.
DESCRIPTION
SYMBOL VALUE VCBO 200 Collector -Base Voltage VCEO 150 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 500 Collector Current PD 625 Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION
SYMBOL TEST CONDITION MIN ICBO VCB=200V, IE=0 Collector Cut off Current IEBO VEB=5V, IC=0 Emitter Cut off Current VCEO IC=1m A, IB=0 150 Collector -Emitter Voltage h FE IC=10m A, VCE=5V 120 DC Current Gain VCE(Sat) IC=10m A, IB=1m A Collector Emitter Saturation Voltage VBE(Sat) IC=10m A, IB=1m A Base Emitter Saturation Voltage Dynamic Characteristics Cob VCB=10V, IE=0, Collector Output Capacitance f=1MHz Transition Frequency ft VCE=30V,IC=10m A, UNIT V V V m A m W deg C
TYP 3.5
MAX 0.1 0.1 360 0.5 1.0 5.0
UNIT u A u A V V V p F
- MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
TO-92 Plastic Package
TO-92 Transistors on Tape and Ammo Pack
Amm o Pack Style
M EC H AN IC AL D ATA Ad hesive Tape o n Top Side
P h A A1 (p)
C arrier Strip
A h
3 2 1
H1 H0 L
LA BE L
FL AT SIDE 8.2"
W2
Wo W1 W t1
K t
F1 F P2 Po
F2 Do
1 3"
1 .7 7"
D 3 E 2 1
ITEM
Flat S id e o f Tra nsis tor and Ad hesive Tape V isible 20 00 pcs./A m m o P ack
All dim ensions in m m unless specified otherwise
SYM BO L A1 A T P Po SPEC IFICAT ION REM ARKS M IN. NO M . M AX. TO L . 4.8 4.0 5.2 4.8 4.2 3.9 12.7 ±1 12.7 ± 0.3 CUM U LATIVE PIT CH ERRO R 1.0 m m /20 PITCH 6.35 ± 0.4 TO BE M EASURED AT BOT TOM O F C LINCH +0.6 5.08 -0.2 0 1 AT TO P OF BODY 18 ± 0.5 6 ± 0.2 9 +0.7 -0.5 0.5 ± 0.2 16 ± 0.5 23.25 11.0 4 ± 0.2 1.2 t1 0.3
- 0 .6 2.54 +0.4 -0.1 3...
