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CSD655 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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Part number CSD655
Manufacturer CDIL
File Size 99.03 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet CSD655 Datasheet
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Description

SYMBOL VALUE VCBO 30 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 700 Collector Current ICP 1.0 Peak PC 500 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCBO IC=10uA, IE=0 30 Collector -Base Voltage VCEO IC=10mA, IB=0 15 Collector -Emitter Voltage VEBO IE=10uA, IC=0 5.0 Emitter Base Voltag

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