Datasheet Details
| Part number | CSD655 |
|---|---|
| Manufacturer | CDIL |
| File Size | 99.03 KB |
| Description | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| Download | CSD655 Download (PDF) |
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Overview: www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.
| Part number | CSD655 |
|---|---|
| Manufacturer | CDIL |
| File Size | 99.03 KB |
| Description | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| Download | CSD655 Download (PDF) |
|
|
|
SYMBOL VALUE VCBO 30 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 700 Collector Current ICP 1.0 Peak PC 500 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCBO IC=10uA, IE=0 30 Collector -Base Voltage VCEO IC=10mA, IB=0 15 Collector -Emitter Voltage VEBO IE=10uA, IC=0 5.0 Emitter Base Voltage ICBO VCB=20V, IE=0 Collector Cut off Current VBE(on) IC=150mA,VCE=1V Base Emitter Voltage VCE(Sat) IC=500mA,IB=50mA Collector Emitter Saturation Voltage hFE IC=150mA,VCE=1V 250 DC Current Gain Dynamic Characteristics ft VCE=1V,IC=150mA, 250 Transition Frequency Cob VCB=10V, IE=0 Collector Out-put Capacitance f=1MHz Cib VEB=0.5V, IC=0 In-put Capacitance f=1MHz hFE CLASSIFICATION D : 250-500;
E : 300-800;
F : 600-1200 MARKING CD 655 E UNIT V V V mA A mW deg C www.DataSheet4U.com MAX 1.0 1.0 0.50 1200 30 120 UNIT V V V uA V V MHz pF pF Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com TO-92 Plastic Package B TO-92 Transistors on Tape and Ammo Pack Amm o Pack Style M EC H AN IC AL D ATA Ad hesive Tape o n Top Side P h A A1 (p) FEE D C arrier Strip A h T 3 2 1 H1 H0 L LA BE L FL AT SIDE 8.2" W2 Wo W1 W t1 K t F1 F P2 Po F2 Do 1 3" 1 .7 7" D 3 E 2 1 ITEM Flat S id e o f Tra nsis tor and Ad hesive Tape V isible 20 00 pcs./A m m o P ack All dim ensions in m m unless specified otherwise SYM BO L A1 A T P Po SPEC IFICAT ION REM ARKS M IN.
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