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LS4448 Datasheet PDF

Continental Device India LS4448

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. LS4448
Datasheet LS4448 Download
Manufacturer
Continental Device India
Description HIGH SPEED SILICON SWITCHING DIODES
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LS4448 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Repetitive Peak Reverse Voltage Continuous Reverse Voltage Peak Forward Surge Current tp=1µs Repetitive Peak Forward Current Forward Current Average Forward Current Power Dissipation up to Tj=25ºC Junction Temperature Storage Temperature Range SYMBOL VRRM VR IFSM IFRM IF IFAV PD Tj Tstg VALUE 100 75 2 500 300 150 500 175 - 65 to +175 THERMAL RESISTANCE Junction to Ambient *Rth (j-a) *Device mounted on a PC board 50mm x 50mm 1.6mm

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION Forward Voltage VF IF=5mA LS4448 IF=50mA LS4148 IF=100mA LS4448 Reverse Current IR VR=20V VR=20V, Tj=150ºC VR=75V Reverse Breakdown Voltage VBR IR=100µA, tp/T=0.01, tp=0.3ms 500 MIN 0.62 100 MAX 0.72 1.0 1.0 25 50 5.0 DYNAMIC CHARACTERISTICS Diode Capacitance Rectification Efficiency Reverse Recovery Time Cd VR=0V, f=1MHz, VHF=50mV 4.0 ηr VHF=2V, f=100MHz 45 trr IF=10mA, to IR=60mA RL=100 Ω Measured @ IR=1mA 4.0 trr IF=10mA, to...
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