Datasheet Details
| Part number | MJE13007 |
|---|---|
| Manufacturer | CDIL |
| File Size | 83.95 KB |
| Description | NPN PLASTIC POWER TRANSISTORS |
| Datasheet | MJE13007 MJE13006 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MJE13007 |
|---|---|
| Manufacturer | CDIL |
| File Size | 83.95 KB |
| Description | NPN PLASTIC POWER TRANSISTORS |
| Datasheet | MJE13007 MJE13006 Datasheet (PDF) |
|
|
|
Collector Emitter Sustaining Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous *Peak Base Current Continuous *Peak Emitter Current Continuous *Peak Power Dissipation upto Ta=25ºC Derate above=25ºC Power Dissipation upto Tc=25ºC Derate above=25ºC SYMBOL VCEO (sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD Operating And Storage Junction Temperature Range Tj, Tstg * Pulse Test: Pulse Width =5ms, Duty Cycle<10% MJE13006 300 600 MJE13007 400 700 9 8 16 4 8 12 24 2 16 80 640 - 65 to +150 UNIT V V V A A A A A A W mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Maxmium Lead Temperature for Soldering Purpose 1/8" from Case for 5 Seconds Rth (j-c) Rth (j-a) TL 1.56 ºC/W 62.5 ºC/W 275 ºC ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter sustaining voltage **VCEO(sus) IC=10mA, IB=0 MJE13006 MJE13007 Collector Cut Off Current ICEV VCEV=Rated Value,VBE=(off)=1.5V Emitter Cut Off Current DC Current Gain IEBO **hFE **Pulse Test: Pulse Width=300µs, Duty Cycle<2% TC=100ºC VCEV=Rated Value,VBE=(off)=1.5V VEB=9V, IC=0 IC=2A, VCE=5V IC=5A, VCE=5V MIN 300 400 8 5 TYP MAX 1.0 5.0 1.0 60 30 UNIT V V mA mA mA Continental Device India Limited Data Sheet Page 1 of 4 NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Saturation Voltage **VCE(sat) IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A IC=5A, IB=1A, Tc=100ºC Base Emitter Saturation Voltage **VBE(sat) IC=2A, IB=0.4A IC=5A, IB=1A IC=5A, IB=1A, Tc=100ºC Current Gain-Bandwidth Product fT IC=50
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE13007 | Silicon NPN Transistor | NTE |
 |
MJE13007 | Power Transistor | Multicomp |
 |
MJE13007 | POWER TRANSISTOR | Motorola |
 |
MJE13007 | Switch-mode NPN Bipolar Power Transistor | ON Semiconductor |
 |
MJE13007 | SILICON NPN SWITCHING TRANSISTOR | ST Microelectronics |
| Part Number | Description |
|---|---|
| MJE13002 | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
| MJE13003 | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
| MJE13004 | NPN PLASTIC POWER TRANSISTORS |
| MJE13005 | NPN PLASTIC POWER TRANSISTORS |
| MJE13006 | NPN PLASTIC POWER TRANSISTORS |
| MJE15028 | NPN PLASTIC POWER TRANSISTORS |
| MJE15029 | PNP PLASTIC POWER TRANSISTORS |
| MJE15030 | NPN PLASTIC POWER TRANSISTORS |
| MJE15031 | PNP PLASTIC POWER TRANSISTORS |
| MJE15032 | SILICON EPITAXIAL POWER TRANSISTORS |