MPSA28 - NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

CDIL

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12

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MPSA28 npn silicon planar epitaxial darlington transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	MPSA28
Manufacturer	CDIL
File Size	115.71 KB
Description	NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
Datasheet	MPSA28 Datasheet

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Other Datasheets by CDIL

Part Number	Description
MPSA29	NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
MPSA05	NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
MPSA06	NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
MPSA13	NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS
MPSA14	NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package EBC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 - 55 to +150 MPSA29 100 100 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 200 83.