MPSA28 Datasheet
MPSA28 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
MPSA28 / MMBTA28 / PZTA28 Discrete POWER & Signal Technologies MPSA28 MMBTA28 C PZTA28 C E C B E C B TO-92 E SOT-23 Mark: 3SS B SOT-223 NPN Darlington Transistor This device is designed for.
unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA28 625 5.0 83.3 200 Max *MMBTA28 350 2.8 357 **PZTA28 1,000 8.0 125 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6".
MPSA28 Datasheet (Central Semiconductor)
Central Semiconductor
The CENTRAL SEMICONDUCTOR MPSA28 and MPSA29 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: F.
0
80 100
12
500
625
-65 to +150
200
83.3
MPSA28 MIN MAX
- 100
* 500
* 100 80 80 12 - 1.2 - 1.5 - 2.0 10,000 10,000 125 - 8.0
MPSA29 MIN MAX
* 100
* 500 - 100 100 100 12 - 1.2 - 1.5 - 2.0 10,000 10,000 125 - 8.0
UNITS V V V mA
mW °C °C/W °C/W
UNITS nA nA nA nA nA V V V V V V
MHz pF
R0 .
MPSA28 Datasheet (onsemi)
onsemi
ON Semiconductort Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous T.
akdown Voltage (IC = 100 mAdc, IE = 0) Emitter
*Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSA28 MPSA29 ICE.
MPSA28 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA28/D Darlington Transistors NPN Silicon COLLECTOR 3 MPSA28 MPSA29* *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS R.
dc, VBE = 0) Collector
* Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter
* Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB .