Datasheet Details
| Part number | MPSA45 |
|---|---|
| Manufacturer | CDIL |
| File Size | 92.24 KB |
| Description | NPN TRANSISTORS |
| Datasheet | MPSA45 MPSA44 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package EBC High Voltage Transistors Complementary of.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MPSA45 |
|---|---|
| Manufacturer | CDIL |
| File Size | 92.24 KB |
| Description | NPN TRANSISTORS |
| Datasheet | MPSA45 MPSA44 Datasheet (PDF) |
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Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air SYMBOL VCBO VCEO VEBO IC PD PD Tj, Tstg Rth (j-c) Rth (j-a) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Of Current Collector Cut Off Current Emitter Cut off Current VCEO VCES VCBO VEBO ICBO ICES IEBO IC=1mA, IB=0 MPSA44 MPSA45 IC=100µA, VBE=0 MPSA44 MPSA45 IC=100µA, IE=0 MPSA44 MPSA45 IE=10µA, IC=0 V CB=400V, IE=0, MPSA44 VCB=320V, IE=0, MPSA45 VCE=400V, VBE = 0, MPSA44 VCE=320V, VBE = 0, MPSA45 VEB=4V, IC = 0 MPSA44 MPSA45 500 400 400 350 6.0 300 625 5.0 1.5 12 - 55 to +150 UNITS V V V mA mW mW/ºC W mW/ºC ºC 83.3 ºC 200 ºC MIN MAX UNITS 400 V 350 V 500 V 400 V 500 V 400 V 6V 100 nA 100 nA 500 nA 500 nA 100 nA Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS EBC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain *hFE VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA Collector Emitter Saturation Voltage *VCE (sat) IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA Base Emitter Saturation Voltage *VBE (sat) IC=10mA, IB=1mA DYNAMIC CHARACTERISTICS DESCRIPTION Output Capacitance Input Capacitance Small Signal Current Gain SYMBOL Cobo Cibo hfe TEST CONDITION VCB=20V, IE=0, f
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MPSA45 | HIGH VOLTAGE TRANSISTOR | Motorola |
 |
MPSA45 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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MPSA45 | NPN TRANSISTOR | UTC |
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MPSA45 | SILICON HIGH VOLTAGE NPN TRANSISTORS | CENTRAL SEMICONDUCTOR |
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MPSA45 | Small Signal Transistors | TAITRON |
| Part Number | Description |
|---|---|
| MPSA42 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| MPSA43 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| MPSA44 | NPN TRANSISTORS |
| MPSA05 | NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPSA06 | NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPSA13 | NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS |
| MPSA14 | NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS |
| MPSA28 | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
| MPSA29 | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
| MPSA55 | NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS |