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MPSA45 - SILICON HIGH VOLTAGE NPN TRANSISTORS

Download the MPSA45 datasheet PDF. This datasheet also covers the MPSA44 variant, as both devices belong to the same silicon high voltage npn transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR MPSA44 and MPSA45 are silicon NPN transistors designed for high voltage applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MPSA44-CENTRALSEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor

Part Number Description
MPSA42 SILICON HIGH VOLTAGE NPN TRANSISTORS
MPSA43 SILICON HIGH VOLTAGE NPN TRANSISTORS
MPSA44 SILICON HIGH VOLTAGE NPN TRANSISTORS
MPSA05 COMPLEMENTARY SILICON TRANSISTORS
MPSA06 COMPLEMENTARY SILICON TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MPSA44 MPSA45 SILICON HIGH VOLTAGE NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA44 and MPSA45 are silicon NPN transistors designed for high voltage applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=400V ICBO VCB=320V ICES VCE=400V ICES VCE=320V IEBO VEB=4.0V BVCBO IC=100μA BVCES IC=100μA BVCEO IC=1.0mA BVEBO IE=10μA VCE(SAT) IC=1.0mA, IB=0.1mA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=10V, IC=1.