• Part: MPSL01
  • Description: NPN SILICON PLANAR EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 84.45 KB
MPSL01 Datasheet (PDF) Download
Continental Device India
MPSL01

Description

SYMBOL VALUE Collector -Base Voltage VCBO 140 Collector -Emitter Voltage VCEO 120 Emitter -Base Voltage VEBO 5.0 Collector Current Continuous IC 150 Power Dissipation @Ta=25 degC PD 625 Derate Above 25 deg C 5.0 Power Dissipation @Tc=25 degC PD 1.5 Derate Above 25 deg C 12 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range Junction to Case Rth(j-c) 83.3 Junction to Ambient Rth(j-a) 200 DESCRIPTION SYMBOL TEST CONDITION MIN Collector -Emitter Voltage VCEO • IC=1mA,IB=0 120 Collector -Base Voltage VCBO IC=100uA.IE=0 140 Emitter -Base Voltage VEBO IE=10uA, IC=-0 5.0 Collector-Cut off Current ICBO VCB=75V, IE=0 - Emitter.