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PZTA42 Datasheet PDF

Continental Device India PZTA42

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. PZTA42
Datasheet PZTA42 Download
Manufacturer
Continental Device India
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
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PZTA42 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL VALUE Collector Base Voltage VCBO 300 Collector Emitter Voltage VCEO 300 Emitter Base Voltage VEBO 6.0 Collector Current (DC) IC 100 Collector Current Peak ICM 200 Base Current Peak IBM 100 Power Dissipation upto Tamb=25ºC *PD 1.2 Storage Temperature Tstg - 65 to +150 Junction Temperature Tj 150 Operating Ambient Temperature Tamb - 65 to +150 UNITS V V V mA mA mA W ºC ºC ºC THERMAL RESISTANCE From junction to ambient From junction to soldering point *Rth (j-a) Rth (j-a) 104 23 K/W K/W * Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

ABSOLUTE MAXIMUM RATINGS

(Tamb=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Cut Off Current Emitter Cut Off Current ICBO IEBO VCB=200V, IE=0 VEB=6V, IC=0 20 nA 100 nA DC Current Gain hFE IC=1mA, VCE=10V 25 IC=10mA, VCE=10V IC=30mA, VCE=10V 40 40 Collector Emitter Satura...
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