Infineon Technologies PZTA42
NPN Silicon High Voltage Transistor
| Part No. | PZTA42 |
|---|---|
| Datasheet | PZTA42 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon High Voltage Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipationTS ≤ 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 6 500 100 1.5 150 -65 ... 150 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 17 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA W °C Unit K/W 1 2011-07-25 PZTA42ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 VCB = 200 V, IE = 0 , TA = 150 °C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA,...
