WEITRON PZTA42
NPN Silicon Planar Epitaxial Transistor
PZTA42 Specifications
- Package : SOT-223
- Polarity : NPN
Source:
Octopart
| Part No. | PZTA42 |
|---|---|
| Datasheet | PZTA42 Download |
| Manufacturer |  WEITRON |
| Description | NPN Silicon Planar Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Device Marking PZTA42=A42 Value 300 300 6 500 2 150 -55 to +150 Unit V V V mA W ˚C ˚CELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC=1mA) Collector-Base Breakdown Voltage (IC=100µA) Emitter-Base Breakdown Voltage (IE=10 µA) Collector-Emitter Cutoff Current (VCB=300V) Emitter-Base Cutoff Current (VEB=6V) Symbol Min V(BR)CEO 300 V(BR)CBO 300 Typ - V(BR)EBO 6 - ICBO - - IEBO - - Max - Unit V V -V 100 nA 100 nA WEITRON 1/3 02-Jun-05 PZTA42 ON CHARACTERISTICS DC Current Gain (VCE = 10V,IC = 1mA) (VCE = 10V,IC = 10mA) (VCE = 10V,IC = 30mA) Collector-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) Base-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) DYNAMIC CHARACTERISTICS Current-Gain—Bandwidth Product (VCE...
