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TIP142T Datasheet PDF

Continental Device India TIP142T

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. TIP142T
Datasheet TIP142T Download
Manufacturer
Continental Device India
Description SILICON PLANAR POWER DARLINGTON TRANSISTORS
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TIP142T datasheet page 1 preview

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (Repetitive) Base Current Power Dissipation @ Tc=25ºC Operating & Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj, Tstg Rth (j-c) VALUE 100 100 5.0 10 20 0.5 80 - 65 to +150 1.0 UNIT V V V A A W ºC ºC/W

ELECTRICAL CHARACTERISTICS

(Tc=25ºC Unless Otherwise Specified)

DESCRIPTION

Collector Cut off Current Collector Cut off Current Emitter Cut off Current Collector Emitter (sus) voltage Collector Emitter Saturation Voltage Base Emitter on Voltage DC Current Gain SYMBOL ICBO ICEO IEBO VCEO * VCE(sat)* VBE(on) * hFE * SWITCHING TIME Turn on time ton Turn off time toff *Pulsed : Pulse duration =200µs, Duty Cycle=1.5% TEST CONDITION VCB=100V, IE=O VCE=50V, IB=0 VEB=5V, IC=0 IC=30mA, IB=0 IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, VCE=4V IC=5A, VCE=4V IC=10A, VCE=4V MIN TYP MAX...
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