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TIP142T - Complementary power Darlington transistors

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Key Features

  • Monolithic Darlington configuration.
  • Integrated antiparallel collector-emitter diode.

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Full PDF Text Transcription (Reference)

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TIP142T TIP147T Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagrams R1 typ. = 5 kΩ R2 typ. = 60 Ω R1 typ. = 8 kΩ R2 typ. = 100 Ω Table 1. Device summary Part number Marking TIP142T TIP147T TIP142T TIP147T Polarity NPN PNP Package TO-220 May 2010 Doc ID 4135 Rev 5 Packaging Tube 1/8 www.st.