The TIP142T is a Complementary power Darlington transistors.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.15 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | TIP142T Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very .
* Monolithic Darlington configuration * Integrated antiparallel collector-emitter diode Application * Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors s. |
| Part Number | TIP142T Datasheet |
|---|---|
| Description | NPN Epitaxial Silicon Darlington Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
TIP142T — NPN Epitaxial Silicon Darlington Transistor
November 2014
TIP142T NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistor.
* Monolithic Construction with Built-in Base-Emitter Shunt Resistors * High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum) * Industrial Use * Complement to TIP147T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP. |
| Part Number | TIP142T Datasheet |
|---|---|
| Description | SILICON PLANAR POWER DARLINGTON TRANSISTORS |
| Manufacturer | Transys |
| Overview | Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (Repetitive) Base Current Power Dissipation @ Tc=25ºC Operating & Storage Junction Temper. ty Cycle=1.5% TEST CONDITION VCB=100V, IE=O VCE=50V, IB=0 VEB=5V, IC=0 IC=30mA, IB=0 IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, VCE=4V IC=5A, VCE=4V IC=10A, VCE=4V MIN TYP MAX 1.0 2.0 2.0 100 2.0 3.0 3.0 1000 500 Ic=10A, IB1=IB2= - 40mA, RL=3Ω 0.9 4.0 UNIT mA mA mA V V V µs µs N LH 1 2 3 D 12 3 . |
| Part Number | TIP142T Datasheet |
|---|---|
| Description | PNP Epitaxial Silicon Darlington Transistor |
| Manufacturer | SEMIHOW |
| Overview | TIP140T/141T/142T TIP140T/141T/142T ◎ SEMIHOW REV.A0,Oct 2007 TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=10. . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| TIP142 | Central Semiconductor | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| TIP142 | Fairchild Semiconductor | NPN Epitaxial Silicon Darlington Transistor |
| TIP142F | Fairchild Semiconductor | NPN Epitaxial Darlington Transistor |
| TIP142 | onsemi | Darlington Complementary Silicon Power Transistors |
| TIP142G | onsemi | Darlington Complementary Silicon Power Transistors |
| TIP142 | Wing Shing Computer Components | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
| TIP142 | Multicomp | Darlington Transistors |