NE685M13 Datasheet | CEL

.. NEC's NPN SILICON TRANSISTOR NE685M13 Features - NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.50 mm package height - Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: f T = 12 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.15+0.1 ñ0.05 0.7±0.05 0.5+0.1 ñ0.05 0.2+0.1 ñ0.05 (Bottom View) - - 1.0+0.1 ñ0.05 LOW NOISE FIGURE: NF = 1.5 d B at 2 GHz Y2 DESCRIPTION NEC's NE685M13 transistor is designed for low noise, high gain, and low cost requirements. This high f T part is well suited for low voltage/low current designs for portable wireless munications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 0.15+0.1 ñ0.05 0.125+0.1 ñ0.05 0.5±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS f T NF |S21E|2 h FE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 m A, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 m A, f = 2 GHz, ZS = ZOPT Insertion Power Gain at VCE = 3 V, IC = 10 m A, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 10 m A Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz µA µA p F 0.4 UNITS GHz d B d B 7.0 75 MIN NE685M13 2SC5617 M13 TYP 12.0 1.5 11.0 140 0.1 0.1 0.7 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the...