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NE85634 - NPN SILICON RF TRANSISTOR

Datasheet Summary

Features

  • Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
  • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz.
  • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.7 mm (t) ceramic substrate).
  • Small package : 3-pin power minimold package.

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Datasheet preview – NE85634

Datasheet Details

Part number NE85634
Manufacturer CEL
File Size 195.46 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet NE85634 Datasheet
Additional preview pages of the NE85634 datasheet.

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Full PDF Text Transcription

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NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.
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