NE85634 Description
NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD.
NE85634 Key Features
- Low noise and high gain
- High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
- Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 0.7 mm (t) ceramic substrate)
- Small package : 3-pin power minimold package
- 12 mm wide embossed taping
- Collector face the perforation side of the tape