• Part: NE85634
  • Description: NPN SILICON RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: CEL
  • Size: 195.46 KB
NE85634 Datasheet (PDF) Download
CEL
NE85634

Key Features

  • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
  • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
  • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.7 mm (t) ceramic substrate)
  • Small package : 3-pin power minimold package