Low noise and high gain
NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz.
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 0.7 mm (t) ceramic substrate).
Full PDF Text Transcription for NE85634 (Reference)
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NE85634. For precise diagrams, and layout, please refer to the original PDF.
NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and h...
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OW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 0.
NE85634 Datasheet
