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NE85634 - NPN SILICON RF TRANSISTOR

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CEL

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NE85634 NPN SILICON RF TRANSISTOR by CEL - Datasheet Preview — Datasheet preview – NE85634

Datasheet Details

Part number	NE85634
Manufacturer	CEL
File Size	195.46 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	NE85634 Datasheet
Additional preview pages of the NE85634 datasheet.

Product details

Features

Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz.
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.7 mm (t) ceramic substrate).
Small package : 3-pin power minimold package.

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Published: Aug 6, 2017 |