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NE85635 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

This page provides the datasheet information for the NE85635, a member of the NE8 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR family.

Datasheet Summary

Description

E n ot T t n O r .

NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications.

Features

  • HIGH GAIN.

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Datasheet preview – NE85635

Datasheet Details

Part number NE85635
Manufacturer NEC
File Size 257.29 KB
Description NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE85635 Datasheet
Additional preview pages of the NE85635 datasheet.

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Full PDF Text Transcription

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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 (CHIP) VCC = 10 V, IC 7 mA MSG 4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4 5 GA MAG 20 Noise Figure, NF (dB) 15 Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) rs e b m : u DESCRIPTION E n ot T t n O r . e a N r n p a g E S si ng heet A i e E d w PL w llo as r e t o o n f a f d r e Th his ded fo office t fro m mmen sales l o rec se cal a Ple ils: a det 5635 NE8 NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications.
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