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NE85630 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

Download the NE85630 datasheet PDF. This datasheet also covers the NE8 variant, as both devices belong to the same necs npn silicon high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

E n ot T t n O r .

NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications.

Key Features

  • HIGH GAIN.

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Note: The manufacturer provides a single datasheet file (NE8-5600.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for NE85630 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE85630. For precise diagrams, and layout, please refer to the original PDF.

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT...

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56 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 (CHIP) VCC = 10 V, IC 7 mA MSG 4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4 5 GA MAG 20 Noise Figure, NF (dB) 15 Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) rs e b m : u DESCRIPTION E n ot T t n O r . e a N r n p a g E S si ng heet A i e E d w PL w llo as r e t o o n f a f d r e Th his ded fo office t fro m mmen sales l o rec se cal a Ple ils: a det 5635 NE8 NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and osci

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