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PRELIMINARY DATA SHEET
NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER PO = 5.0 mW • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm (Based on ITU-T recommendations) • LOW THRESHOLD CURRENT Ith = 10 mA • HIGH SPEED tr = 100 ps MAX • SIDE MODE SUPPRESSION RATIO SMSR = 40 dB • OPERATING CASE TEMPERATURE RANGE TC = -20 to +85°C • InGaAs MONITOR PIN-PD • CAN PACKAGE Ø5.6 mm • BASED ON TELCORDIA RELIABILITY
NX6508 Series
DESCRIPTION
NEC's NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. These devices are ideal for 2.5 Gb/s CWDM application.