UPA863TD - NPN SILICON RF TRANSISTOR

CEL

Key Features

2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP. , ⏐S21e⏐2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz fT = 4.5 GHz TYP. , ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz.
Low voltage operation Q2: Built-in low phase distortion transistor suited for OSC operation.
6-pin lead-less minimold package BUILT-IN.

UPA863TD npn silicon rf transistor by CEL - Datasheet Preview

Datasheet Details

Part number	UPA863TD
Manufacturer	CEL
File Size	746.54 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	UPA863TD Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
UPA863TS	NPN SILICON RF TRANSISTOR	NEC
UPA861TD	NECs NPN SILICON RF TWIN TRANSISTOR	NEC
UPA862TD	NECs NPN SILICON RF TWIN TRANSISTOR	NEC
UPA800T	NPN Transistor	NEC
UPA800TF	NPN SILICON HIGH FREQUENCY TRANSISTOR	NEC

Other Datasheets by CEL

Part Number	Description
UPA810T	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA814T	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA895TD	NPN SILICON RF TWIN TRANSISTOR
UPA901TU	NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET NPN SILICON RF TWIN TRANSISTOR μPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz fT = 4.5 GHz TYP., ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Low voltage operation Q2: Built-in low phase distortion transistor suited for OSC operation • 6-pin lead-less minimold package BUILT-IN TRANSISTORS Q1 3-pin thin-type ultra super minimold part No.