UPA863TD
UPA863TD is NPN SILICON RF TRANSISTOR manufactured by CEL.
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
μPA863TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
Features
- 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz fT = 4.5 GHz TYP., ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
- Low voltage operation
Q2: Built-in low phase distortion transistor suited for OSC operation
- 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
Q1 3-pin thin-type ultra super minimold part No. 2SC5436 Q2 2SC5800
ORDERING INFORMATION
Part Number Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form
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