UPA863TS Datasheet | NEC

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD Features - Low voltage operation - 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz - 6-pin super lead-less minimold package BUILT-IN TRANSISTORS Flat-lead 3-pin thin-type ultra super minimold part No. Q1 2SC5436 Q2 2SC5800 ORDERING INFORMATION Part Number µPA863TS µPA863TS-T3 Quantity...