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UPA863TS - NPN SILICON RF TRANSISTOR

Key Features

  • Low voltage operation.
  • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP. , S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 6-pin super lead-less minimold package BUILT-IN TRANSISTORS Flat-lead 3-pin thin-type ultra super minimold part No.