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UPA895TD - NPN SILICON RF TWIN TRANSISTOR

General Description

NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips.

The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects.

Key Features

  • LOW.

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Datasheet Details

Part number UPA895TD
Manufacturer CEL
File Size 156.55 KB
Description NPN SILICON RF TWIN TRANSISTOR
Datasheet download datasheet UPA895TD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: Just 0.50 mm high 1 6 0.4 UPA895TD OUTLINE DIMENSIONS (Units in mm) Package Outline TD (TOP VIEW) 1.0±0.05 0.8 +0.07 -0.05 (Top View) 0.15±0.05 TWO LOW NOISE OSCILLATOR TRANSISTORS: 0.8 C1 1 Q1 6 B1 kP NE851 IDEAL FOR 1-3 GHz OSCILLATORS 1.2 +0.07 -0.05 2 5 E1 0.4 2 Q2 5 E2 3 4 C2 3 4 B2 DESCRIPTION NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects.