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UPA895TS - NPN SILICON RF TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Built-in low voltage operation, low phase distortion transistor suited for OSC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA895TS NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Built-in 2 transistors (2 × 2SC5800) • 6-pin super lead-less minimold package BUILT-IN TRANSISTORS Flat-lead 3-pin thin-type ultra super minimold part No. Q1, Q2 2SC5800 ORDERING INFORMATION Part Number µPA895TS µPA895TS-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office.