UPD5702TU - Si LD MOS POWER AMPLIFIER

CEL

Download the UPD5702TU datasheet PDF. This datasheet also covers the UPD5702 variant, as both devices belong to the same si ld mos power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application.

This IC consists of two stage amplifiers.

The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package.

Key Features

MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz.
ON CHIP OUTPUT POWER.

📥 Download Datasheet

UPD5702TU si ld mos power amplifier by CEL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (UPD5702_CaliforniaEasternLabs.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	UPD5702TU
Manufacturer	CEL
File Size	176.33 KB
Description	Si LD MOS POWER AMPLIFIER
Datasheet	UPD5702TU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION • SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP • PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT DESCRIPTION NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.