UPD5702TU datasheet by NEC (now Renesas Electronics).
| Part number | UPD5702TU |
|---|---|
| Datasheet | UPD5702TU-NEC.pdf |
| File Size | 61.86 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT |
|
|
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.
View UPD5702TU datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
UPD5702TU | Si LD MOS POWER AMPLIFIER | CEL |
View all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| UPD5710TK | WIDE BAND SPDT SWITCH |
| UPD5715GR | CMOS MMIC 4 x 2 IF SWITCH MATRIX |
| UPD5716GR | CMOS MMIC 4 x 2 IF SWITCH MATRIX |
| UPD5738T6N | WIDE BAND DPDT SWITCH |
| UPD5747T6J | LOW NOISE AND HIGH GAIN AMPLIFIER |
| uPD5200 | Dual SPST CMOS analog switch |
| UPD5201C | C-Mos Quad Spst Analog Switch |
| UPD5205 | MOS Integrated Circue |
| uPD546 | SINGLE CHIP MICROCOMPUTER |
| UPD547 | 4-BIT SINGLE CHIP MICROCOMPUTER |
