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UPD5702TU Datasheet 3v Operation Silicon Ldmosfet Rf Power Amplifier Integrated Circuit

Manufacturer: NEC (now Renesas Electronics)

Overview: PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.

General Description

The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications.

This IC consists of two stage amplifiers.

The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.

Key Features

  • Output Power : Pout = +21 dBm MIN. @Pin =.
  • 5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V.
  • Single Supply voltage : VDS = 3.0 V TYP.
  • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
CEL Logo UPD5702TU Si LD MOS POWER AMPLIFIER CEL

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UPD5702TU Distributor