Datasheet Summary
PRELIMINARY DATA SHEET
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µPD5702TU
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.
Features
- Output Power
: Pout = +21 dBm MIN. @Pin =
- 5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
- Single Supply voltage
: VDS = 3.0 V TYP.
- Packaged in 8-pin Lead-Less...
