Datasheet4U Logo Datasheet4U.com

UPG2314T5N - POWER AMPLIFIER

Datasheet Summary

Description

The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for BluetoothTM Class1.

This device realizes high efficiency, high gain and high output power by using InGaP HBT.

This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package.

Features

  • ･ Operating Frequency ･ Supply Voltage ･ Control Voltage ･ Circuit Current ･ Output Power ･ Gain Control Range ･ High Efficiency ･ High-density surface mounting : fopt = 2400 to 2500MHz 2450MHz TYP. : VCC1,2 = 2.7 to 3.6V 3.0V TYP. : Vcont = 0 to 3.6V 3.0V TYP. : Vbias + Venable = 0 to 3.1V 3.0V TYP. : ICC = 65mA TYP. @ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm : Pout = +20.0dBm TYP. @ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm : GCR = 23dB TYP. @ VCC1,2.

📥 Download Datasheet

Datasheet preview – UPG2314T5N

Datasheet Details

Part number UPG2314T5N
Manufacturer CEL
File Size 694.94 KB
Description POWER AMPLIFIER
Datasheet download datasheet UPG2314T5N Datasheet
Additional preview pages of the UPG2314T5N datasheet.

📁 Similar Datasheet

  • UPG2304TK - L-BAND VCO LOCAL BUFFER AMPLIFIER (NEC)
  • UPG2006TB - NECs 1.8 V L/ S-BAND SPDT SWITCH (NEC)
  • UPG2009TB - L-BAND HIGH POWER SPDT SWITCH (NEC)
  • UPG2012TB - L-BAND SPDT SWITCH (NEC)
  • UPG2012TK - NECs W SINGLE CONTROL L/ S-BAND SPDT SWITCH (NEC)
  • UPG2024TQ - NECs GaAs MMIC DPDT SWITCHES (California Eastern Labs)
  • UPG2027TQ - NECs L-BAND 4W HIGH POWER SPDT SWITCH IC (NEC)
  • UPG2030TB - NECs 1W L/ S-BAND SPDT SWITCH (NEC)
  • UPG2030TK - NECs 1 W ULTRA SMALL SPDT SWITCH (NEC)
  • UPG20N60 - SMPS N-CHANNEL IGBT (UTC)
Other Datasheets by CEL

Full PDF Text Transcription

Click to expand full text
PRELIMINARY DATA SHEET GaAs HBT INTEGRATED CIRCUIT uPG2314T5N POWER AMPLIFIER FOR BluetoothTM Class1 DESCRIPTION The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for BluetoothTM Class1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package. And this package is able to high-density surface mounting. FEATURES ･ Operating Frequency ･ Supply Voltage ･ Control Voltage ･ Circuit Current ･ Output Power ･ Gain Control Range ･ High Efficiency ･ High-density surface mounting : fopt = 2400 to 2500MHz 2450MHz TYP. : VCC1,2 = 2.7 to 3.6V 3.0V TYP. : Vcont = 0 to 3.6V 3.0V TYP. : Vbias + Venable = 0 to 3.1V 3.0V TYP. : ICC = 65mA TYP. @ VCC1,2 = 3.
Published: |