DESCRIPTION
The CENTRAL SEMICONDUCTOR MAXIMUM RATINGS
(TC=25°C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCEV Emitter-Base Voltage VEBO Collector Current IC Peak Collector Current ICM Base Current IB Peak Base Current IBM Emitter Current IE Peak Emitter Current IEM Power Dissipation (TA=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 400 700 9.0 4.0 8.0 2.0 4.0 6.0 12 2.0 75 -65 to +150 62.5 1.67 UNITS V V V A A A A A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV ICEV IEBO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE VCE=700V, VBE(OFF)=1.5V VCE=700V, VBE(OFF)=1.5V, TC=100°C VEB=9.0V IC=10mA IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A 400 10 8.0 MAX 1.0 5.0 1.0 0.5 0.6 1.0 1.2 1.6 60 40 UNITS mA mA mA V V V V V...
Central Semiconductor
