CET CEB01N65
N-Channel MOSFET
| Part No. | CEB01N65 |
|---|---|
| Datasheet | CEB01N65 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 1.3 5.2 41 0.33 1.3 d 5.2 d 27 0.22 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 62.5 4.5 65 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice .
