CEB01N6 Datasheet | CET

FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. S CEB SERIES TO-263(DD-PAK) CEI SERIES TO-262(I2-PAK) CEP SERIES TO-220 CEF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V ±30 1 4 36 0.29 60 0.8 -55 to 150 1 4 e e A A W W/ C m J A C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current Operating and Store Temperature Range 28 0.22 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 3.5 62.5 Limit 4.5 65 Units C/W C/W Rev 1. 2005.December 1 http://.cetsemi. CEP01N6/CEB01N6 CEI01N6/CEF01N6 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forwand Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.8A VDS = 480V, ID = 0.8A, VGS = 10V VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω 19 13 24 35 6 1.0 4.4 0.8 1.6 38 26 48 70 8 ns ns ns ns n C n C n C A V...