CET CEB02N6
N-Channel MOSFET
| Part No. | CEB02N6 |
|---|---|
| Datasheet | CEB02N6 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.5 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 4 VGS = 0V, Is =2A DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. c. L=60mH, IAS=2.0A, VDD=50V, RG=25Ω , Starting TJ=25 C 3.0 VGS=10,9,8,7V 2.5 ID, Drain Current(A) 2.0 1.5 1.0 ID, Drain Current (A) 150 C 1 VGS=6V VGS=5V 0.5 0 0 2 4 6 8 10 12 -55 C 25 C 1.VDS=40V 2.Pulse Test 0.1 2 4 6 8 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 4-4 CEP02N6/CEB02N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 500 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 ID=1A VGS=10V C, Capacitance (pF) 400 300 200 100 0 0 5 10 15 20 25 Coss Crss Ciss 4 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3.
