CEB02N6
CEB02N6 is N-Channel MOSFET manufactured by CET.
CEP02N6/CEB02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a
Symbol
Condition
Min Typ Max Unit
250 50 30 1.5
PF PF PF
VDS =25V, VGS = 0V f =1.0MHZ
VGS = 0V, Is =2A
DRAIN-SOURCE DIODE CHARACTERISTICS
Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. c. L=60m H, IAS=2.0A, VDD=50V, RG=25Ω , Starting TJ=25 C
3.0 VGS=10,9,8,7V 2.5
ID, Drain Current(A)
2.0 1.5 1.0
ID, Drain Current (A)
150 C
VGS=6V
VGS=5V
0.5 0 0 2 4 6 8 10 12
-55 C 25 C
1.VDS=40V 2.Pulse Test
0.1 2
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
4-4
CEP02N6/CEB02N6
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)...
