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CEB02N6 - N-Channel MOSFET

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Part number CEB02N6
Manufacturer CET
File Size 78.34 KB
Description N-Channel MOSFET
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CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.5 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 4 VGS = 0V, Is =2A DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. c. L=60mH, IAS=2.0A, VDD=50V, RG=25Ω , Starting TJ=25 C 3.0 VGS=10,9,8,7V 2.5 ID, Drain Current(A) 2.0 1.5 1.0 ID, Drain Current (A) 150 C 1 VGS=6V VGS=5V 0.5 0 0 2 4 6 8 10 12 -55 C 25 C 1.VDS=40V 2.Pulse Test 0.
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