CEB02N65G
CEB02N65G is N-Channel Enhancement Mode Field Effect Transistor manufactured by CET.
FEATURES
Type CEP02N65G CEB02N65G CEF02N65G
VDSS 650V 650V
650V
RDS(ON) 5.5Ω 5.5Ω
5.5Ω
ID @VGS 2A 10V 2A 10V 2A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage
VDS 650
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM e
2 2d 1 1d 8 8d
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
60 28 PD 0.48 0.22
Single Pulsed Avalanche Energy g
Single Pulsed Avalanche Current g Operating and Store Temperature Range
EAS IAS TJ,Tstg
11.25 1.5
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC...
