CEB02N6G
CEB02N6G is N-Channel MOSFET manufactured by CET.
FEATURES
Type CEP02N6G CEB02N6G CEF02N6G
VDSS 600V 600V
600V
RDS(ON) 5Ω 5Ω
5Ω
ID 2.2A 2.2A 2.2A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS 600
VGS ±30
2.2 1.4
IDM e
60 PD 0.48
TO-220F
2.2 d 1.4d 8.8 d 33 0.26
Single Pulsed Avalanche Energy g
Single Pulsed Avalanche Current g Operating and Store Temperature Range
EAS IAS...