• Part: CEB02N6G
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 351.66 KB
Download CEB02N6G Datasheet PDF
CET
CEB02N6G
CEB02N6G is N-Channel MOSFET manufactured by CET.
FEATURES Type CEP02N6G CEB02N6G CEF02N6G VDSS 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω ID 2.2A 2.2A 2.2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 D S CEF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 600 VGS ±30 2.2 1.4 IDM e 60 PD 0.48 TO-220F 2.2 d 1.4d 8.8 d 33 0.26 Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g Operating and Store Temperature Range EAS IAS...