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CEP02N65D/CEB02N65D
CEF02N65D
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP02N65D CEB02N65D CEF02N65D
VDSS 650V 650V
650V
RDS(ON) 6.9Ω 6.9Ω
6.9Ω
ID @VGS 2A 10V 2A 10V 2A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
650
±30
2 8 41 0.33
2d 8d 27 0.
CEB02N65D Datasheet
