CET CEB06N5
N-Channel MOSFET
| Part No. | CEB06N5 |
|---|---|
| Datasheet | CEB06N5 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. 4 4 D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 SABSOLUTE MAXIMUM RATINGS
(Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 500 Unit V V A A A W W/ C C Ć 30 6.6 20 6.6 104 0.83 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 4-17 1.2 62.5 C/W C/W CEP06N5/CEB06N5ELECTRICAL CHARACTERISTICS
(TC=25 C unless otherwise noted) 4 4 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=24mH RG=25 Ω Min Typ Max Unit DRAIN-SOURCE AVALANCHE...
