CET CEB09N6
N-Channel MOSFET
| Part No. | CEB09N6 |
|---|---|
| Datasheet | CEB09N6 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 600 ±30 9 35 156 1.25 500 9 -55 to 150 9 e e A A W W/ C mJ A C 35 50 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range 0.38 500 9 Thermal Characteristics Parameter Thermal Resistance, Junction...
