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CEP09N7G/CEB09N7G
CEF09N7G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP09N7G CEB09N7G CEF09N7G
VDSS 700V 700V
700V
RDS(ON) 1Ω 1Ω
1Ω
ID 9A 9A 9A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
700
±30
9 36 166 1.3
9d 36 d 50 0.
CEB09N7G Datasheet
