Type CEP15P15 CEB15P15 CEF15P15
VDSS -150V -150V
-150V
RDS(ON) 0.24Ω 0.24Ω
0.24Ω
ID -15A -15A -15A d
@VGS -10V -10V
-10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
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CEP15P15/CEB15P15
CEF15P15
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP15P15 CEB15P15 CEF15P15
VDSS -150V -150V
-150V
RDS(ON) 0.24Ω 0.24Ω
0.24Ω
ID -15A -15A -15A d
@VGS -10V -10V
-10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS -150 VGS ±20
ID -15 -9
IDM e
- 60
96 PD
0.
CEB15P15 Datasheet
